SIC MOSFET在感应加热电源中的应用

彭咏龙; 史孟; 李亚斌; 江涛

彭咏龙,史孟,李亚斌,江涛.SIC MOSFET在感应加热电源中的应用[J].电测与仪表,2017,54(12):.
PENG Yong-long,SHI Meng,LI Ya-bin,JIANG Tao.Application of SiC MOSFET in induction heating power supply[J].Electrical Measurement & Instrumentation,2017,54(12):.

SIC MOSFET在感应加热电源中的应用

Application of SiC MOSFET in induction heating power supply

DOI：

中文关键词: SiC MOSFET 高频感应加热

英文关键词:SiCMOSFET, high frequency, induction heating

基金项目:

作者中文名	作者英文名	单位
彭咏龙	PENG Yong-long	华北电力大学电气与电子工程学院
史孟	SHI Meng	华北电力大学电气与电子工程学院
李亚斌	LI Ya-bin	华北电力大学电气与电子工程学院
江涛	JIANG Tao	华北电力大学电气与电子工程学院

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中文摘要:

目前,感应加热电源技术主要朝着大功率、高频率和智能化控制技术的方向发展。然而,随着逆变开关频率的提高,功率器件的开关损耗随之增加。具有的高临界雪崩击穿电场强度、高热导率、小介电常数等突出优点宽禁带半导体材料SiC MOSFET的应用为这一问题提供了理想的解决方案。本文详细研究了基于SiC MOSFET逆变器的设计、相应的驱动以及功率扩展；开发出了单桥可稳定输出50kW/800kHz,单机容量可达200 kW的新型感应加热电源。

英文摘要:

At present, the induction heating power supply technology is mainly towardsS the direction of high power, high frequency and intelligent control technology. However, with the increase of the inverter switching frequency, the switching loss of power devices is increasing. With the outstanding advantages of high critical avalanche breakdown electric field strength, high thermal conductivity, low dielectric constant, the application of SiC MOSFET, as a wide band gap semiconductor materials, provides an ideal solution for this problem. In this paper, the design of inverter based on SiC MOSFET, and the corresponding drive circuits and the power scaling are studied in detail; finally, a new type of induction heating power supply with single bridge and stable output of 50kW/800kHz and unit capacity of up to 200 kW is developed.

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