基于TMR元件的电流传感器的研制

王海宝; 郭海平; 王于波; 王峥; 郭彦

王海宝,郭海平,王于波,王峥,郭彦.基于TMR元件的电流传感器的研制[J].电测与仪表,2018,55(9):103-107.
Wang haibao,Guo Haiping,Wang Yubo,wang zheng,Guo Yan.Study and manufacture of current sensor based on TMR device[J].Electrical Measurement & Instrumentation,2018,55(9):103-107.

基于TMR元件的电流传感器的研制

Study and manufacture of current sensor based on TMR device

DOI：

中文关键词: TMR 电流传感器有限元分析高灵敏度

英文关键词:TMR current sensor FEA high sensitive

基金项目:

作者中文名	作者英文名	单位
王海宝	Wang haibao	北京智芯微电子科技有限公司
郭海平	Guo Haiping	江苏多维科技有限公司
王于波	Wang Yubo	北京智芯微电子科技有限公司
王峥	wang zheng	北京智芯微电子科技有限公司
郭彦	Guo Yan	北京智芯微电子科技有限公司

摘要点击次数: 1995

中文摘要:

以50A的电流传感器为目标,建立了通电导线的磁场模型,利用有限元仿真软件计算出通电导线周围的磁场。基于在通电导线上方的两个位置磁场大小相等、方向相反的特点,设计了全桥拓扑结构的TMR元件。采用IrMn/CoFeB/Ru/CoFeB/MgO/CoFeB/NiFe/Ta的磁隧道结膜层结构,制备得到的TMR元件灵敏度为4.4mv/v/Oe,线性范围达到15Gs,offset仅为1%Vcc。利用该TMR元件构建的开环电流传感器,精度达到了1%,证明了TMR元件能够被用于电流传感器中。

英文摘要:

Model of magnetic field produced by current lead targeting to 50A is built, and field is calculated utilizing FEA simulation software. Full-bridge topological structure TMR device is designed based on the characteristic which the existence of two points over the lead with the same amplitude and opposite direction of magnetic field. The TMR device was fabricated using the film stack of IrMn/ CoFeB/Ru/CoFeB/MgO/CoFeB/NiFe/Ta. The obtained TMR device possessed the sensitivity of 4.4mV/V/Oe, linear range of 15Gs, and offset of 1% Vcc. The accuracy of the current sensor using this TMR device reached 1%, and the TMR device was proven to be used in current sensor.

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