On the basis of project, one kind of driver circuit for SiC MOSFET was discussed according to the requirements of 50KW/1MHz high power SiC MOSFET circuit, and the switching characteristics of SiC MOSFET. Through the process of opening the detailed characteristics of SiC MOSFET , come to make reliable, safe driving requirements, to improve it in Si MOSFET driver circuit-based applications on existing mature, research for the job in the megahertz range of SiC MOSFET driver circuit . The basic characteristics of the driver circuit using double-pulse experiments to verify the design and determine the optimal parameters of the gate resistance.