At present, the induction heating power supply technology is mainly towardsS the direction of high power, high frequency and intelligent control technology. However, with the increase of the inverter switching frequency, the switching loss of power devices is increasing. With the outstanding advantages of high critical avalanche breakdown electric field strength, high thermal conductivity, low dielectric constant, the application of SiC MOSFET, as a wide band gap semiconductor materials, provides an ideal solution for this problem. In this paper, the design of inverter based on SiC MOSFET, and the corresponding drive circuits and the power scaling are studied in detail; finally, a new type of induction heating power supply with single bridge and stable output of 50kW/800kHz and unit capacity of up to 200 kW is developed.