• HOME
  • About Journal
    • Historical evolution
    • Journal Honors
  • Editorial Board
    • Members of Committee
    • Director of the Committee
    • President and Editor in chief
  • Submission Guide
    • Instructions for Authors
    • Manuscript Processing Flow
    • Model Text
    • Procedures for Submission
  • Academic Influence
  • Open Access
  • Ethics&Policies
    • Publication Ethics Statement
    • Peer Review Process
    • Academic Misconduct Identification and Treatment
    • Advertising and Marketing
    • Correction and Retraction
    • Conflict of Interest
    • Authorship & Copyright
  • Contact Us
  • Chinese
Site search        
文章摘要
工频过电压耐受下氧化锌压敏电阻冲击老化性能研究
Research on impact aging performance of MOV tolerated under Power Frequency overvoltage
Received:February 26, 2014  Revised:March 06, 2014
DOI:
中文关键词: 氧化锌压敏电阻,8/20μs冲击老化,工频耐受下MOV内部电流,耐受时间
英文关键词: MOV, 8/20μs current pulse impact aging, the internal current during the tolerance, The tolerance time
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目)
Author NameAffiliationE-mail
zhangxin Nanjing University of Information Science & Technology zhx870819@126.com 
xinghongyan* School of Electronic & Information Engineering, Nanjing University of Information Science & Technology xinghy@nuist.edu.cn 
Hits: 1864
Download times: 1072
中文摘要:
      针对氧化锌压敏电阻(Metal Oxide Varistor,MOV)芯片在8/20μs电流冲击初期,芯片压敏电压变化较小,老化程度无法通过静态参数判别的问题,本文设计了工频过电压耐受下的MOV冲击老化试验,研究了MOV芯片不同冲击老化情况,耐受工频恒定不同幅值过电压过程和耐受阶段流经芯片内部电流Iin随时间的变化关系;结合双肖特基势垒理论和MOV芯片Voronoi网格微观结构模型,分析试验结论。结果表明:耐受工频恒定相同幅值过电压,MOV芯片经8/20μs电流冲击后老化程度越深其流过芯片内部电流Iin的初始值越大;且 值随时间上升速率与初始冲击老化程度呈正比;相同老化程度MOV芯片耐受过电压幅值越大,耐受时间越短,Iin的初始值越大。这些可为MOV冲击老化劣化初期判别提供依据。
英文摘要:
      Impact aging experiment based on the tolerance of MOV(Metal Oxide Varistor) under continuous Power Frequency overvoltage was designed to solve the problem that the change of breakdown voltage is too small to tell the aging degree of MOV chip. Different situations of Impact aging and the tolerance of MOV under different amplitude of overvoltage were studied, the relationship between the internal current during the tolerance (Iin) and the time is given. Experimental result was studied with Dual Schottky barrier theory and Voronoi grid model. The result shows that the larger the aging degree impacted by 8/20μs current pulse is ,the larger the initial value of Iin is; The increased rate of over time is proportional to the initial aging degree; the tolerance time is inversely proportional to the aging degree of MOV chip; the larger the amplitude of overvoltage is, the shorter the tolerance time is when the aging situations are equal. These results can be used to determine the Aging and deterioration degree of the MOV chips.
View Full Text   View/Add Comment  Download reader
Close
  • Home
  • About Journal
    • Historical evolution
    • Journal Honors
  • Editorial Board
    • Members of Committee
    • Director of the Committee
    • President and Editor in chief
  • Submission Guide
    • Instructions for Authors
    • Manuscript Processing Flow
    • Model Text
    • Procedures for Submission
  • Academic Influence
  • Open Access
  • Ethics&Policies
    • Publication Ethics Statement
    • Peer Review Process
    • Academic Misconduct Identification and Treatment
    • Advertising and Marketing
    • Correction and Retraction
    • Conflict of Interest
    • Authorship & Copyright
  • Contact Us
  • 中文页面
Address: No.2000, Chuangxin Road, Songbei District, Harbin, China    Zip code: 150028
E-mail: dcyb@vip.163.com    Telephone: 0451-86611021
© 2012 Electrical Measurement & Instrumentation
黑ICP备11006624号-1
Support:Beijing Qinyun Technology Development Co., Ltd